參數(shù)資料
型號(hào)： MCL4448-TR3
廠商： VISHAY SEMICONDUCTORS
元件分類： 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述： 0.2 A, 100 V, SILICON, SIGNAL DIODE
封裝： HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 164K
代理商： MCL4448-TR3
www.vishay.com
2
Document Number 85566
Rev. 2.0, 20-Aug-10
MCL4148, MCL4448
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
Mounted on epoxy-glass hard
tissue, Fig. 5,
35 m copper clad, 0.9 mm2
copper area per electrode
RthJA
500
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 5 mA
MCL4448
VF
620
720
mV
IF = 50 mA
MCL4148
VF
860
1000
mV
IF = 100 mA
MCL4448
VF
930
1000
mV
Reverse current
VR = 20 V
IR
25
nA
VR = 20 V, Tj = 150 °C
IR
50
A
VR = 75 V
IR
5A
Breakdown voltage
IR = 100 A, tp/T = 0.01,
tp = 0.3 ms
V(BR)
100
V
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
4pF
Rectification efficiency
VHF = 2 V, f = 100 MHz
ηr
45
%
Reverse recovery time
IF = IR =10 mA, iR = 1 mA
trr
8ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
4ns
Figure 1. Forward Current vs. Forward Voltage
00.4
0.8
1.2
1.6
0.1
1
10
100
1000
I-
F
o
rw
ard
C
u
rrent
(mA)
F
VF - Forward Voltage (V)
2.0
16641
MCL 4148
Scattering Limit
Tj = 25 °C
Figure 2. Forward Current vs. Forward Voltage
00.4
0.8
1.2
1.6
0.1
1
10
100
1000
I-
F
o
rw
ard
C
u
rrent
(mA)
F
VF -Forward Voltage (V)
2.0
16643
MCL 4448
Scattering Limit
Tj =25
°C
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