- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95925 > MCL4154-TR (VISHAY SEMICONDUCTORS) 0.15 A, 35 V, SILICON, SIGNAL DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | MCL4154-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.15 A, 35 V, SILICON, SIGNAL DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, GLASS, MICROMELF-2 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 161K |
| 代理商： | MCL4154-TR |
www.vishay.com
2
Document Number 85568
Rev. 1.9, 20-Aug-10
MCL4154
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
Mounted on epoxy-glass hard
tissue, Fig. 4,
35 m copper clad, 0.9 mm2
copper area per electrode
RthJA
500
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 30 mA
VF
1000
mV
Reverse current
VR = 25 V
IR
100
nA
VR = 25 V, Tj = 150 °C
R
100
A
Breakdown voltage
IR = 5 A, tp/T = 0.01, tp = 0.3 ms
V(BR)
35
V
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
4pF
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA
trr
4ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
2ns
Figure 1. Reverse Current vs. Junction Temperature
040
80
120
160
0.01
0.1
1
10
100
I-
R
e
v
erse
C
u
rrent
(
A)
R
Tj - Junction Temperature (°C)
200
94 9154
V
R = 25 V
Scattering Limit
Figure 2. Forward Current vs. Forward Voltage
00.4
0.8
1.2
1.6
0.1
1
10
100
1000
I-
F
o
rw
ard
C
u
rrent
(mA)
F
V - Forward Voltage (V)
2.0
94 9152
F
T = 25 °C
j
T = 100 °C
j
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCL4154 | SIGNAL DIODE |
| MCPH3105 | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MCU2600 | VIDEO CLOCK GENERATOR, PDIP14 |
| MD1803DFX | 10 A, 700 V, NPN, Si, POWER TRANSISTOR |
| MD2009DFX | 10 A, 700 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCL4154-TR3 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 35 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MCL4448 | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Switching Diode - Silicon epitaxial planar type |
| MCL4448 _R1 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MCL4448_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MCL4448_09 | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:150mA Surface Mount Switching Diode- 100V |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。