參數(shù)資料
型號(hào): MCL103A-TR3
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.2 A, SILICON, SIGNAL DIODE
封裝: HALOGEN FREE AND ROHS COMPLIANT, GLASS, MICROMELF-2
文件頁數(shù): 2/5頁
文件大小: 159K
代理商: MCL103A-TR3
www.vishay.com
2
Document Number 85632
Rev. 1.6, 05-Aug-10
MCL103A, MCL103B, MCL103C
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
IR = 10 A
MCL103A
V(BR)
40
V
MCL103B
V(BR)
30
V
MCL103C
V(BR)
20
V
Leakage current
VR = 30 V
MCL103A
IR
5A
VR = 20 V
MCL103B
IR
5A
VR = 10 V
MCL103C
IR
5A
Forward voltage drop
IF = 20 mA
VF
370
mV
IF = 200 mA
VF
600
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
ns
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Forward Voltage
I F
-
For
w
ard
C
u
rrent
(mA)
0 100 200 300 400 500 600 700 800 900 1000
V
F - Forward Voltage (mV)
16765
1000
100
10
1
0.1
0.01
0.001
I F
-
For
w
ard
C
u
rrent
(A)
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
V
F - Forward Voltage (V)
16766
Figure 3. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
10 000
20
40
60
80
0
100
120
140
160
T
j - Junction Temperature (°C)
16767
I R
-
Re
v
erse
C
u
rrent
(
A)
0
5
10
15
20
25
30
0
1015202530
V
R - Reverse Voltage (V)
16768
C
D
-
Diode
Capacitance
(pF)
f = 1 MHz
5
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