參數(shù)資料
型號： MCIMX356AJQ5C
廠商： Freescale Semiconductor
文件頁數(shù)： 61/147頁
文件大?。?/td> 0K
描述： IC MPU IMX35 ARM11 400MAPBGA
產(chǎn)品培訓模塊： i.MX35 Processor
OpenVG™ on i.MX35 Graphics
標準包裝： 90
系列： i.MX35
核心處理器： ARM11
芯體尺寸： 32-位
速度： 532MHz
連通性： 1 線，CAN，EBI/EMI，以太網(wǎng)，I²C，MMC，SPI，SSI，UART/USART，USB OTG
外圍設備： DMA，I²S，LCD，POR，PWM，WDT
輸入/輸出數(shù)： 96
程序存儲器類型： ROMless
RAM 容量： 128K x 8
電壓 - 電源 (Vcc/Vdd)： 1.33 V ~ 1.47 V
振蕩器型： 外部
工作溫度： -40°C ~ 85°C
封裝/外殼： 400-LFBGA
包裝： 托盤
i.MX35 Applications Processors for Automotive Products, Rev. 10
Freescale Semiconductor
20
The method for obtaining max current is as follows:
1. Measure worst case power consumption on individual rails using directed test on i.MX35.
2. Correlate worst case power consumption power measurements with worst case power
consumption simulations.
3. Combine common voltage rails based on power supply sequencing requirements
4. Guard band worst case numbers for temperature and process variation. Guard band is based on
process data and correlated with actual data measured on i.MX35.
5. The sum of individual rails is greater than real world power consumption, as a real system does
not typically maximize power consumption on all peripherals simultaneously.
4.6
Thermal Characteristics
The thermal resistance characteristics for the device are given in Table 12. These values were measured
under the following conditions:
Two-layer substrate
Substrate solder mask thickness: 0.025 mm
Substrate metal thicknesses: 0.016 mm
Substrate core thickness: 0.200 mm
Core via I.D: 0.168 mm, Core via plating 0.016 mm.
Full array map design, but nearly all balls under die are power or ground.
Die Attach: 0.033 mm non-conductive die attach, k = 0.3 W/m K
Mold compound: k = 0.9 W/m K
Table 11. Power Consumption
Power Supply
Voltage (V)
Max Current (mA)
QVCC
1.47
400
MVDD, PVDD
1.65
20
NVCC_EMI1, NVCC_EMI2, NVCC_EMI3, NVCC_LCDC, NVCC_NFC
1.9
90
FUSE_VDD1
1 This rail is connected to ground; it only needs a voltage if eFuses are to be programmed. FUSE_VDD should be supplied by
following the power up sequence given in Section 4.3.1, “Powering Up.”
3.6
62
NVCC_MISC, NVCC_CSI, NVCC_SDIO, NVCC_CRM, NVCC_ATA, NVCC_MLB,
NVCC_JTAG
3.6
60
OSC24M_VDD, OSC_AUDIO_VDD, PHY1_VDDA, PHY2_VDD,
USBPHY1_UPLLVDD, USBPHY1_VDDA_BIAS
3.6
25
Table 12. Thermal Resistance Data
Rating
Condition
Symbol
Value
Unit
Junction to ambient1 natural convection
Single layer board (1s)
ReJA
53
C/W
Junction to ambient1 natural convection
Four layer board (2s2p)
ReJA
30
C/W
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相關代理商/技術參數(shù)
參數(shù)描述
MCIMX356AJQ5C 制造商:Freescale Semiconductor 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE
MCIMX356AJQ5CR2 功能描述:處理器 - 專門應用 RINGO MX35 TO2.1 RoHS:否 制造商:Freescale Semiconductor 類型:Multimedia Applications 核心:ARM Cortex A9 處理器系列:i.MX6 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:1 GHz 指令/數(shù)據(jù)緩存: 數(shù)據(jù) RAM 大小:128 KB 數(shù)據(jù) ROM 大小: 工作電源電壓: 最大工作溫度:+ 95 C 安裝風格:SMD/SMT 封裝 / 箱體:MAPBGA-432
MCIMX356AVM4B 功能描述:處理器 - 專門應用 i.MX35 Auto Apps Processor RoHS:否 制造商:Freescale Semiconductor 類型:Multimedia Applications 核心:ARM Cortex A9 處理器系列:i.MX6 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:1 GHz 指令/數(shù)據(jù)緩存: 數(shù)據(jù) RAM 大小:128 KB 數(shù)據(jù) ROM 大小: 工作電源電壓: 最大工作溫度:+ 95 C 安裝風格:SMD/SMT 封裝 / 箱體:MAPBGA-432
MCIMX356AVM4BR2 功能描述:處理器 - 專門應用 i.MX35 Auto Apps Processor RoHS:否 制造商:Freescale Semiconductor 類型:Multimedia Applications 核心:ARM Cortex A9 處理器系列:i.MX6 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:1 GHz 指令/數(shù)據(jù)緩存: 數(shù)據(jù) RAM 大小:128 KB 數(shù)據(jù) ROM 大小: 工作電源電壓: 最大工作溫度:+ 95 C 安裝風格:SMD/SMT 封裝 / 箱體:MAPBGA-432
MCIMX356AVM5B 功能描述:處理器 - 專門應用 RINGO MX35 TO2 RoHS:否 制造商:Freescale Semiconductor 類型:Multimedia Applications 核心:ARM Cortex A9 處理器系列:i.MX6 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:1 GHz 指令/數(shù)據(jù)緩存: 數(shù)據(jù) RAM 大小:128 KB 數(shù)據(jù) ROM 大小: 工作電源電壓: 最大工作溫度:+ 95 C 安裝風格:SMD/SMT 封裝 / 箱體:MAPBGA-432
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