參數(shù)資料
型號(hào): MCIMX31LDVMN5D
廠商: Freescale Semiconductor
文件頁數(shù): 35/118頁
文件大小: 0K
描述: IC MPU I.MX31L CONSUMR 473MAPBGA
標(biāo)準(zhǔn)包裝: 84
系列: i.MX31
核心處理器: ARM11
芯體尺寸: 32-位
速度: 532MHz
連通性: 1 線,ATA,EBI/EMI,F(xiàn)IR,I²C,MMC/SD,PCMCIA,SIM,SPI,SSI,UART/USART,USB,USB OTG
外圍設(shè)備: DMA,LCD,POR,PWM,WDT
程序存儲(chǔ)器類型: ROMless
RAM 容量: 16K x 8
電壓 - 電源 (Vcc/Vdd): 1.22 V ~ 3.3 V
振蕩器型: 外部
工作溫度: 0°C ~ 70°C
封裝/外殼: 473-LFBGA
包裝: 托盤
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.3
Freescale Semiconductor
23
4.3.3
Clock Amplifier Module (CAMP) Electrical Characteristics
This section outlines the Clock Amplifier Module (CAMP) specific electrical characteristics. Table 19
shows clock amplifier electrical characteristics.
Table 17. AC Electrical Characteristics of Fast1 General I/O 2
1 Fast/slow characteristic is selected per GPIO (where available) by “slew rate” control. See reference manual.
2 Use of GPIO in fast mode with the associated NVCC > 1.95 V can result in excessive overshoot and ringing.
ID
Parameter
Symbol
Test
Condition
Min
Typ
Max
Units
PA1
Output Transition Times (Max Drive)
tpr
25 pF
50 pF
0.68
1.34
1.33
2.6
2.07
4.06
ns
Output Transition Times (High Drive)
tpr
25 pF
50 pF
.91
1.79
1.77
3.47
2.74
5.41
ns
Output Transition Times (Std Drive)
tpr
25 pF
50 pF
1.36
2.68
2.64
5.19
4.12
8.11
ns
Table 18. AC Electrical Characteristics of DDR I/O
ID
Parameter
Symbol
Test
Condition
Min
Typ
Max
Units
PA1
Output Transition Times (DDR Drive)1
1 Use of DDR Drive can result in excessive overshoot and ringing.
tpr
25 pF
50 pF
0.51
0.97
0.82
1.58
1.28
2.46
ns
Output Transition Times (Max Drive)
tpr
25 pF
50 pF
0.67
1.29
1.08
2.1
1.69
3.27
ns
Output Transition Times (High Drive)
tpr
25 pF
50 pF
.99
1.93
1.61
3.13
2.51
4.89
ns
Output Transition Times (Std Drive)
tpr
25 pF
50 pF
1.96
3.82
3.19
6.24
4.99
9.73
ns
Table 19. Clock Amplifier Electrical Characteristics for CKIH Input
Parameter
Min
Typ
Max
Units
Input Frequency
15
75
MHz
VIL (for square wave input)
0
0.3
V
VIH (for square wave input)
(VDD 1– 0.25)
1 VDD is the supply voltage of CAMP. See reference manual.
—3
V
Sinusoidal Input Amplitude
0.4 2
2 This value of the sinusoidal input will be measured through characterization.
—VDD
Vp-p
Duty Cycle
45
50
55
%
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