參數(shù)資料
型號(hào): MCIMX255AVM4
廠商: Freescale Semiconductor
文件頁數(shù): 57/140頁
文件大?。?/td> 0K
描述: IC MPU I.MX25 AUTO 400MAPBGA
標(biāo)準(zhǔn)包裝: 90
系列: i.MX25
核心處理器: ARM9
芯體尺寸: 32-位
速度: 400MHz
連通性: 1 線,CAN,EBI/EMI,以太網(wǎng),I²C,MMC,智能卡,SPI,SSI,UART/USART,USB OTG
外圍設(shè)備: DMA,I²S,LCD,POR,PWM,WDT
輸入/輸出數(shù): 128
程序存儲(chǔ)器類型: 外部程序存儲(chǔ)器
RAM 容量: 144K x 8
電壓 - 電源 (Vcc/Vdd): 1.15 V ~ 1.52 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 3x12b
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 400-LFBGA
包裝: 托盤
i.MX25 Applications Processor for Automotive Products, Rev. 10
Freescale Semiconductor
23
3.5.2
GPIO I/O DC Parameters
Table 20 shows the I/O parameters for GPIO.
Termination voltage5
Vtt
OVDD/2 – 0.04
OVDD/2
OVDD/2 + 0.04
Input current6(no pull-up/down)
IIN
VI = 0
VI = OVDD
110
60
nA
High-impedance I/O supply current6
Icc-ovdd
VI = OVDD or 0
980
nA
High-impedance core supply current6
Icc-vddi
VI = VDD or 0
1210
nA
1 OVDD = 1.7 V; V
out = 1.42 V. (Vout-OVDD)/IOH must be less than 21 W for values of Vout between OVDD and OVDD-0.28 V.
2 OVDD = 1.7 V; V
out = 280 mV. Vout/IOL must be less than 21 W for values of Vout between 0 V and 280 mV. Simulation circuit
for parameters Voh and Vol for I/O cells is below.
3 Vin(dc) specifies the allowable DC excursion of each differential input.
4 Vid(dc) specifies the input differential voltage required for switching. The minimum value is equal to Vih(dc) - Vil(dc).
5 Vtt is expected to track OVDD/2.
6 Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
wcs model, 1.65 V, and 105 °C.
Table 20. GPIO DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
High-level output voltage1
Voh
Ioh=–1mA
Ioh = Specified Drive
OVDD – 0.15
0.8
× OVDD
——
V
Low-level output voltage1
Vol
Iol=1mA
Iol=Specified Drive
0.15
0.2
× OVDD
V
High-level output current for slow mode
I
Ioh
Voh=0.8
× OVDD
Standard Drive
High Drive
Max. Drive
–2.0
–4.0
–8.0
——
mA
High-level output current for fast mode
I
Ioh
Voh=0.8
× OVDD
Standard Drive
High Drive
Max. Drive
–4.0
–6.0
–8.0
——
mA
Low-level output current for slow mode
I
Iol
Voh=0.2
× OVDD
Standard Drive
High Drive
Max. Drive
2.0
4.0
8.0
——
mA
Low-level output current for fast mode
I
Iol
Voh=0.2
× OVDD
Standard Drive
High Drive
Max. Drive
4.0
6.0
8.0
——
mA
High-level DC input voltage
VIH
0.7
× OVDD
OVDD
V
Low-level DC input voltage
VIL
–0.3 V
0.3
× OVDD
V
Table 19. DDR2 (SSTL_18) I/O DC Electrical Characteristics (continued)
DC Electrical Characteristics
Symbol Test Conditions
Min.
Typ.
Max.
Units
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