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參數(shù)資料
| 型號： | MCH6931 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | MCH6931 |
MCH6931
No.8037-2/6
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
VCB=--12V, IE=0
--100
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0
--100
nA
DC Current Gain
hFE
VCE=--2V, IC=--10mA
300
700
Gain-Bandwidth Product
fT
VCE=--2V, IC=--50mA
450
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
6
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--400mA, IB=--20mA
--120
--240
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--400mA, IB=--20mA
--0.9
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10A, IE=0
--15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--12
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10A, IC=0
--5
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
75
ns
Fall Time
tf
See specified Test Circuit.
15
ns
[FET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=80mA
0.15
0.22
S
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Input Capacitance
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
65
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
155
ns
Fall Time
tf
See specified Test Circuit.
120
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=150mA
0.26
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
nC
Diode Forward Voltage
VSD
IS=150mA, VGS=0
0.87
1.2
V
Package Dimensions
Electrical Connection
unit : mm
2236
5
6
1
4
23
1 : Source
2 : Gate
3 : Collector
4 : Emitter
5 : Base
6 : Drain
Top view
1 : Source
2 : Gate
3 : Collector
4 : Emitter
5 : Base
6 : Drain
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
(Bottom view)
(Top view)
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