參數(shù)資料
型號: MCH6657
元件分類: 小信號晶體管
英文描述: 700 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MCPH6, 6 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 274K
代理商: MCH6657
MCH6657
No. A1284-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
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third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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PS
This catalog provides information as of August, 2008. Specications and information herein are subject
to change without notice.
Ambient Temperature, Ta --
°C
PD -- Ta
Allowable
Power
Dissipation,
P
D
--
W
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source
V
oltage,
V
GS
--
V
0
0.2
--1
--2
0.4
--3
--4
0.6
--5
--6
--7
0.8
--8
1.0
--9
1.2
--10
1.8
1.6
1.4
2.0
VDS= --10V
ID= --0.7A
IT13925
0
20
40
60
0.8
0.2
0.6
0.4
80
1.0
140
100
120
160
IT13927
--0.1
--1.0
--0.01
2
3
5
7
2
3
5
7
2
3
5
IT13926
--0.1
23
5 7 --1.0
23
5
23
5 7 --10
IDP= --2.8A
Operation in this area
is limited by RDS(on).
1ms
10ms
100ms
DC
operation
(Ta
=2
5°C
)
ID= --0.7A
100
μs
When mounted on ceramic substrate
(900mm2
×0.8mm) 1unit
Ta=25
°C
Single pulse
When mounted on ceramic substrate
(900mm2
×0.8mm) 1unit
PW
≤10μs
Note on usage : Since the MCH6657 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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