- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95925 > MCH6634 700 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MCH6634 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | MCH6634 |
MCH6634
No.8229-2/7
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
30
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
7
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
3.5
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
See specified Test Circuit.
6
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
10
ns
Fall Time
tf
See specified Test Circuit.
8
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=700mA
1
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=700mA
0.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=700mA
0.2
nC
Diode Forward Voltage
VSD
IS=700mA, VGS=0V
0.93
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=--8V, VDS=0V
--1
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100A
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--200mA
0.25
0.42
S
RDS(on)1
ID=--200mA, VGS=--4V
1.5
1.9
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--100mA, VGS=--2.5V
2.0
2.8
RDS(on)3
ID=--10mA, VGS=--1.5V
4.0
8.0
Input Capacitance
Ciss
VDS=--10V, f=1MHz
40
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
8
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
4.5
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
5
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
10
ns
Fall Time
tf
See specified Test Circuit.
5
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4V, ID=--400mA
0.83
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--400mA
0.25
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--400mA
0.17
nC
Diode Forward Voltage
VSD
IS=--400mA, VGS=0V
--1.0
--1.5
V
Package Dimensions
Electrical Connection
unit : mm
7022A-006
65
4
13
2
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH6646 | 2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6646 | 2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6649 | 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6649 | 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6651 | 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6634-TL-E | 制造商:SANYO 功能描述:P+N 30V 0.4A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6635 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6635-TL-E | 制造商:SANYO 功能描述:P+P 20V 0.8A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 20V 0.8A MCPH6 制造商:Sanyo 功能描述:0 |
| MCH6644 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
| MCH6644-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。