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參數(shù)資料
| 型號(hào)： | MCH6627 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 50K |
| 代理商： | MCH6627 |
MCH6627
No.8000-2/6
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.4A
2.5
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=1.4A
0.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=1.4A
0.3
nC
Diode Forward Voltage
VSD
IS=1.4A, VGS=0
0.87
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--500mA
0.4
0.8
S
RDS(on)1
ID=--500mA, VGS=--10V
420
550
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--300mA, VGS=--4V
720
1000
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
75
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
16
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
9
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6
ns
Rise Time
tr
See specified Test Circuit.
4
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
12
ns
Fall Time
tf
See specified Test Circuit.
4
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--1A
2.6
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--1A
0.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--1A
0.5
nC
Diode Forward Voltage
VSD
IS=--1A, VGS=0
--0.89
--1.5
V
Package Dimensions
Electrical Connection
unit : mm
2173A
Switching Time Test Circuit
[N-channel]
[P-channel]
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
(Bottom view)
(Top view)
654
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=700mA
RL=21.4
VDD=15V
VOUT
MCH6627
VIN
10V
0V
VIN
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID= --500mA
RL=30
VDD= --15V
VOUT
MCH6627
VIN
0V
--10V
VIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH6627 | 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6628 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6629 | 400 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6631 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6631 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6627-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6628 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6628-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6629 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6629-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 30V 0.4A MCPH6 |
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