參數(shù)資料
型號: MCH6626
元件分類: 小信號晶體管
英文描述: 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MCPH6, 6 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 47K
代理商: MCH6626
MCH6626
No.7918-2/6
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
105
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
23
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6
ns
Rise Time
tr
See specified Test Circuit.
16
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
19
ns
Fall Time
tf
See specified Test Circuit.
8
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=1.6A
1.4
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=1.6A
0.3
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=1.6A
0.3
nC
Diode Forward Voltage
VSD
IS=1.6A, VGS=0
0.92
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--20V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--0.4
--1.3
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--500mA
0.7
1.2
S
RDS(on)1
ID=--500mA, VGS=--4V
380
500
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--300mA, VGS=--2.5V
540
760
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
115
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
23
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
See specified Test Circuit.
6
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
15
ns
Fall Time
tf
See specified Test Circuit.
7
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4V, ID=--1A
1.5
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--1A
0.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--1A
0.3
nC
Diode Forward Voltage
VSD
IS=--1A, VGS=0
--0.9
--1.5
V
Electrical Connection
Switching Time Test Circuit
[N-channel]
[P-channel]
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=800mA
RL=12.5
VDD=10V
VOUT
MCH6626
VIN
4V
0V
VIN
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID= --500mA
RL=20
VDD= --10V
VOUT
MCH6626
VIN
0V
--4V
VIN
654
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
相關PDF資料
PDF描述
MCH6627 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6627 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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相關代理商/技術參數(shù)
參數(shù)描述
MCH6626-TL-E 功能描述:MOSFET N/P-CH 20V 1.6/1A MCPH6 RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道(雙) FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
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MCH6627-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82
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MCH6628-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82