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參數(shù)資料
| 型號： | MCH6616 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1600 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | MCH6616 |
MCH6616
No.7013-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
1.6
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
6.4
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.8A
1.6
2.4
S
RDS(on)1
ID=0.8A, VGS=4V
180
230
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.4A, VGS=2.5V
220
310
m
RDS(on)3
ID=0.1A, VGS=1.8V
300
450
m
Marking : FQ
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7013
MCH6616
Package Dimensions
unit : mm
2173A
[MCH6616]
71801 TS IM TA-3262
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
相關PDF資料 |
PDF描述 |
|---|---|
| MCH6616 | 1600 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6619 | 1000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6619 | 1000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6620 | 1400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6620 | 1400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6616-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 20V 1.6A SC-82 |
| MCH6617 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR |
| MCH6617-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 20V 1A MCPH6 制造商:ON Semiconductor 功能描述: |
| MCH6619-TL-E | 制造商:SANYO 功能描述:P+P 30V 1A 0.55 MCH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 30V 1A SC-82 制造商:Sanyo 功能描述:0 |
| MCH6620-TL-E | 制造商:SANYO 功能描述:N+N 30V 1.4A 0.3 MCH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 30V 1.4A SC-82 制造商:Sanyo 功能描述:0 |
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