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參數(shù)資料
| 型號(hào)： | MCH6606 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 250 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 49K |
| 代理商： | MCH6606 |
MCH6606
No.6461-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
6.2
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
4.4
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
1.5
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
11
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
105
ns
Fall Time
tf
See specified Test Circuit.
75
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=100mA
1.40
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=100mA
0.21
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=100mA
0.34
nC
Diode Forward Voltage
VSD
IS=100mA, VGS=0V
0.85
1.2
V
Package Dimensions
Electrical Connection
unit : mm (typ)
7022A-006
Switching Time Test Circuit
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
PW=10s
D.C.≤1%
10V
0V
VIN
P.G
50
G
ID=50mA
RL=500
VDD=25V
VOUT
D
S
MCH6606
65
4
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
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