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參數(shù)資料
| 型號： | MCH6437TL |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 20 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-82, SC-82A, SC-88, MCPH6, 6 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 333K |
| 代理商： | MCH6437TL |
MCH6437
No. A1776-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=4A
6.2
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=4A, VGS=4.5V
18
24
mΩ
RDS(on)2
ID=2A, VGS=2.5V
25
35
mΩ
RDS(on)3
ID=1A, VGS=1.8V
38
65
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
660
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
125
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
100
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
9.7
ns
Rise Time
tr
See specied Test Circuit.
53
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
72
ns
Fall Time
tf
See specied Test Circuit.
65
ns
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=7A
8.4
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4.5V, ID=7A
1.0
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4.5V, ID=7A
2.4
nC
Diode Forward Voltage
VSD
IS=7A, VGS=0V
0.81
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
4.5V
0V
VIN
P.G
50Ω
G
S
ID=4A
RL=2.5Ω
VDD=10V
VOUT
VIN
D
MCH6437
ID -- VGS
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain
Current,
I
D
--
A
0
1
4
3
2
6
5
7
0
3
2
1
6
5
4
8
7
9
10
0
IT15716
IT15717
0.1
0.4
0.2
0.6
0.5
0.3
0.8
0.7
0.9
1.0
0
0.4
0.2
0.8
0.6
1.0
1.2
1.6
1.4
1.8
2.0
VDS=10V
--25
°C
T
a=75
°C
VGS=1.0V
1.8V
25
°C
6.0V
2.
5V
1.5V
8.0V
Ta=25
°C
4.5V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6437-TL-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MCH6438 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6440 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6444 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6444-TL-H | 功能描述:MOSFET PNP+NPN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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