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參數(shù)資料
| 型號(hào)： | MCH6436 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 294K |
| 代理商： | MCH6436 |
MCH6436
No. A1565-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=3A, VGS=4.5V
26
34
mΩ
RDS(on)2
ID=1.5A, VGS=2.5V
35
49
mΩ
RDS(on)3
ID=1A, VGS=1.8V
46
69
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
710
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
95
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
65
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
11
ns
Rise Time
tr
See specied Test Circuit.
33
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
70
ns
Fall Time
tf
See specied Test Circuit.
52
ns
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=6A
7.5
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4.5V, ID=6A
1.3
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4.5V, ID=6A
1.5
nC
Diode Forward Voltage
VSD
IS=6A, VGS=0V
0.82
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7022A-009
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
PW=10μs
D.C.≤1%
4.5V
0V
VIN
P.G
50Ω
G
S
ID=3A
RL=5Ω
VDD=15V
VOUT
VIN
D
MCH6436
ID -- VGS
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain
Current,
I
D
--
A
0
2
1
5
4
3
6
7
IT15063
0
0.4
0.8
1.2
1.6
0.2
0.6
1.0
1.4
1.8
VDS=10V
--25
°C
T
a=75
°C
25
°C
0
1.5
1.0
0.5
3.0
2.5
2.0
3.5
4.0
0
IT15078
0.1
0.4
0.2
0.6
0.5
0.3
0.8
0.7
0.9
1.0
VGS=1.2V
1.8V
6.0V
2.5V
1.5V
8.0V
4.5V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6436_12 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6436-TL-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MCH6437 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6437_12 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6437-P-TL-E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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