參數(shù)資料
型號(hào)： MCH6103
廠商： SANYO SEMICONDUCTOR CO LTD
元件分類： 小信號(hào)晶體管
英文描述： 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, MCPH6, 6 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 42K
代理商： MCH6103
MCH6103 / MCH6203
No.6611-1/5
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm).
High allowable power dissipation.
Specifications ( ) : MCH6103
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)80
V
Collector-to-Emitter Voltage
VCES
(--50)80
V
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)1.0
A
Collector Current (Pulse)
ICP
(--)3
A
Base Current
IB
200
mA
Collector Dissipation
PC
Mounted on a ceramic board (600mm2!0.8mm)
1.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
A
DC Current Gain
hFE
VCE=(--)2V, IC=(--)100mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)300mA
420
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(9)6
pF
Marking : MCH6103 : AC, MCH6203 : CC
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6611A
D1004 TS IM TB-00000351 / N2000TS (KOTO) TA-2974
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
MCH6103 / MCH6203 PNP / NPN Epitaxial Planar SiliconTransistors
DC / DC Converter Applications
相關(guān)PDF資料
PDF描述
MCH6302 3 A, 30 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
MCH6303 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6305 4 A, 20 V, 0.0654 ohm, P-CHANNEL, Si, POWER, MOSFET
MCH6305 4 A, 20 V, 0.0654 ohm, P-CHANNEL, Si, POWER, MOSFET
MCH6306 4 A, 30 V, 0.069 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCH6103_04 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications
MCH6103-TL-E 功能描述:兩極晶體管 - BJT BIP PNP 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MCH6121 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifi er
MCH6121-TL-H 功能描述:兩極晶體管 - BJT BIP PNP 3A 12V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MCH6122 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifier
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