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參數(shù)資料
| 型號： | MCH5837 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MCH5837 |
MCH5837
No. A0781-6/6
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
Note on usage : Since the MCH5837 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of July, 2009. Specifications and information herein are subject
to change without notice.
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| MCH6001 | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH5837-TL-E | 功能描述:MOSFET N-CH/DIODE SCHOTTKY MCPH5 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MCH5839-TL-H | 制造商:ON Semiconductor 功能描述:PCH+SBD 1.8V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH+SBD 1.8V DRIVE SERIES |
| MCH5908 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications |
| MCH5908_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Amplifi er, AM Amplifier, Low-Frequency Amplifier Applications |
| MCH5908G-TL-E | 功能描述:MOSFET N-CH 15V 50MA MCPH5 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
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