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參數(shù)資料
| 型號： | MCH5823 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MCH5823 |
MCH5823
No.7757-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--12
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--12V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±9.6V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--6V, ID=--1mA
--1.0
--2.4
V
Forward Transfer Admittance
yfs
VDS=--6V, ID=--0.8A
0.72
1.2
S
RDS(on)1
ID=--0.8A, VGS=--10V
200
270
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--0.4A, VGS=--4.5V
340
490
m
RDS(on)3
ID=--0.1A, VGS=--4V
370
530
m
Input Capacitance
Ciss
VDS=--6V, f=1MHz
145
pF
Output Capacitance
Coss
VDS=--6V, f=1MHz
45
pF
Reverse Transfer Capacitance
Crss
VDS=--6V, f=1MHz
35
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
7.5
ns
Rise Time
tr
See specified Test Circuit
20
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
16
ns
Fall Time
tf
See specified Test Circuit
12
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--1.5A
3.8
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--1.5A
0.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--1.5A
0.5
nC
Diode Forward Voltage
VSD
IS=--1.5A, VGS=0
--0.94
--1.5
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
15
V
Forward Voltage
VF1IF=0.3A
0.30
0.33
V
VF2IF=0.5A
0.33
0.36
V
Reverse Current
IR
VR=6V
90
A
Interterminal Capacitance
C
VR=10V, f=1MHz, 1 cycle
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Package Dimensions
Electrical Connection
unit : mm
2195
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
32
4
5
12
3
54
(Bottom view)
(Top view)
54
3
12
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
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