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參數(shù)資料
| 型號： | MCH5812 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MCH5812 |
MCH5812
No.7998-2/6
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.4
2.4
S
RDS(on)1
ID=1A, VGS=4V
125
165
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=2.5V
165
235
m
RDS(on)3
ID=0.1A, VGS=1.8V
225
340
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
120
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
31
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
29
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
18
ns
Fall Time
tf
See specified Test Circuit
22
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=2A
2.3
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=2A
0.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=2A
0.75
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0
0.94
1.2
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
15
V
Forward Voltage
VF1IF=0.3A
0.3
0.33
V
VF2IF=0.5A
0.33
0.36
V
Reverse Current
IR
VR=6V
90
A
Interterminal Capacitance
C
VR=10V, f=1MHz, 1 cycle
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Package Dimensions
Electrical Connection
unit : mm
2195
54
3
12
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
32
4
5
12
3
54
(Bottom view)
(Top view)
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