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參數(shù)資料
| 型號(hào)： | MCH5812 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | MCH5812 |
MCH5812
No.7998-4/6
IT07682
2
3
5
7
1.0
0.1
2
3
5
7
0.01
2
3
5
7
10
1.0
23
5 7 10
0.1
23
5 7
0.01
23
5 7
2 3
5
Operation in this
area is limited by RDS(on).
100ms
10ms
1ms
100
s
IDP=8A
ID=2A
DC
operation
(T
a=25
°C)
IT07669
0
20
40
0.2
0.4
0.6
0.8
1.0
60
80
100
120
140
160
0.01
0.1
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
SW Time -- ID
IT06295
Ciss, Coss, Crss -- VDS
IT06293
0.01
0.1
23
5
7
1.0
23
5
7
0.1
1.0
7
5
3
2
3
2
VDS=10V
IT06294
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
25
°C
0
4
8
12
16
20
2
6
10
14
18
10
100
1000
7
5
3
2
7
5
3
2
f=1MHz
Ciss
Coss
IT06296
VGS -- Qg
IT06297
0
0.5
1.0
1.5
2.0
2.5
1.0
2.0
3.0
4.0
0.5
1.5
2.5
3.5
PD -- Ta
A S O
--25
°C
Ta=25
°C
75°
C
10
100
1000
7
5
3
2
7
5
3
2
7
5
3
2
1.0
23
5 7
0.01
0.1
1.0
23
5 7
2
3
5 7 10
tr
td(on)
tf
td(off)
Crss
VDD=10V
VGS=4V
VGS=0
T
a=75
°C
--25
°C
yfs -- ID
IF -- VSD
Drain Current, ID -- A
Switching
T
ime,
SW
T
ime
-
ns
Drain Current, ID -- A
Forward
T
ransfer
Admittance,
y
fs
-
S
Diode Forward Voltage, VSD -- V
Forward
Current,
I
F
--
A
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
--
W
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ta=25
°C
Single pulse
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted
on
a ceramic
board
(900mm
2!
0.8mm)
1unit
VDS=10V
ID=2A
[MOSFET]
<10
s
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| MCH5812 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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|---|---|
| MCH5812-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
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| MCH5818 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| MCH5819 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MCH5819 |
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