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參數(shù)資料
| 型號： | MCH3484 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | HALOGEN FREE, SC-70, MCPH3, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 370K |
| 代理商： | MCH3484 |
MCH3484
No. A1883-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±4V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.3
0.8
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2A
5.6
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=2A, VGS=2.5V
33
40
mΩ
RDS(on)2
ID=1A, VGS=1.8V
37
49
mΩ
RDS(on)3
ID=0.5A, VGS=1.2V
79
119
mΩ
RDS(on)4
ID=0.1A, VGS=0.9V
165
330
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
630
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
75
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
65
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
8.9
ns
Rise Time
tr
See specied Test Circuit.
49
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
63
ns
Fall Time
tf
See specied Test Circuit.
57
ns
Total Gate Charge
Qg
VDS=10V, VGS=2.5V, ID=4.5A
11
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=2.5V, ID=4.5A
0.9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=2.5V, ID=4.5A
1.8
nC
Diode Forward Voltage
VSD
IS=4.5A, VGS=0V
0.8
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=2A
RL=5Ω
VDD=10V
VOUT
MCH3484
VIN
2.5V
0V
VIN
ID -- VGS
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain
Current,
I
D
--
A
0
0.5
3.5
4.0
3.0
1.5
2.5
2.0
1.0
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT16110
1.2V
1.4V
4.5V
VGS=0.8V
2.5V
0.9V
1.0V
1
0
6
5
4
3
2
0
1.2
0.6
1.8
1.0
0.4
1.6
0.8
0.2
1.4
2.0
IT16111
T
a=75
°C
VDS=10V
25
°C
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