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參數(shù)資料
| 型號(hào)： | MCH3416 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH3, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | MCH3416 |
MCH3416
No.7996-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7996
MCH3416
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
1.8
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
7.2
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.9A
1.1
2.1
S
RDS(on)1
ID=0.9A, VGS=10V
170
220
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.9A, VGS=4V
210
300
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
220
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
28
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
20
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
See specified Test Circuit.
5
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
27
ns
Fall Time
tf
See specified Test Circuit.
20
ns
Marking : KR
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N2504 TS IM TB-00000254
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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| MCH3416-TL-E | 制造商:SANYO 功能描述:Nch 60V 1.8A 220m@10V MCPH3 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 1.8A MCPH3 |
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| MCH3420-TL-E | 制造商:SANYO 功能描述:Nch 100V 0.5A 1.85 lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 0.5A SC-82 制造商:Sanyo 功能描述:0 |
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| MCH3421-TL-E | 功能描述:MOSFET N-CH 100V 0.8A MCPH3 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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