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參數(shù)資料
| 型號(hào)： | MCH3410 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH3, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | MCH3410 |
MCH3410
No.6864-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6864
MCH3410
Package Dimensions
unit : mm
2167
[MCH3410]
13001 TS IM TA-3061
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0.25
2.1
1.6
2.0
0.65
0.3
0.85
0.15
12
3
0.15
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
2.0
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
8.0
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.4
2.0
S
RDS(on)1
ID=1A, VGS=10V
115
150
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=4V
190
270
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
120
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
30
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
15
pF
Marking : KK
Continued on next page.
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| MCH3410 | 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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| MCH3411 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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| MCH3412-TL-E | 制造商:SANYO 功能描述:Nch 30V 3A 0.084 lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 3A SC-82 制造商:Sanyo 功能描述:0 |
| MCH3414 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3414-TL-E | 制造商:SANYO 功能描述:Nch 60V 1A 0.63 lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 1A SC-82 制造商:Sanyo 功能描述:0 |
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