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參數(shù)資料
| 型號： | MCH3318 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH3, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | MCH3318 |
MCH3318
No.7213-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--12
V
Gate-to-Source Voltage
VGSS
±8V
Drain Current (DC)
ID
--2
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--8
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--12
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--12V, VGS=0
--10
A
Gate-to-Source Leakage Current
IGSS
VGS=±6.4V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--6V, ID=--1mA
--0.3
--1.0
V
Forward Transfer Admittance
yfs
VDS=--6V, ID=--1A
2.0
2.9
S
RDS(on)1
ID=--1A, VGS=--4.5V
110
145
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--0.5A, VGS=--2.5V
160
225
m
RDS(on)3
ID=--0.2A, VGS=--1.8V
220
330
m
Marking : JT
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7213
MCH3318
Package Dimensions
unit : mm
2167A
[MCH3318]
72602 TS IM TA-3485
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
相關PDF資料 |
PDF描述 |
|---|---|
| MCH3319 | 2600 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH3320 | 300 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH3321 | 500 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH3321 | 500 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH3322 | 600 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCH3318-TL-E | 制造商:SANYO 功能描述:Pch 12V 2A lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 12V 2A SC-82 制造商:Sanyo 功能描述:0 |
| MCH3319 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH3319-TL-E | 制造商:SANYO 功能描述:Pch 12V 2.6A lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 12V 2.6A SC-82 制造商:Sanyo 功能描述:0 |
| MCH3320 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH3321 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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