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參數(shù)資料
| 型號(hào)： | MCH3221 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, MCPH3, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | MCH3221 |
MCH3221
No. A0181-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
20
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1.5A, IB=30mA
80
120
mV
VCE(sat)2
IC=1.5A, IB=75mA
65
100
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1.5A, IB=30mA
0.83
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0A
40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
300
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7019A-004
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
12
3
0 to 0.02
VR
VCC=12V
VBE= --5V
+
50
RB
INPUT
OUTPUT
RL
100
F
470
F
PW=20
s
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=500mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
3.0
1.5
1.0
0.5
2.5
2.0
0
3.0
1.5
1.0
0.5
2.5
2.0
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT10394
IT10395
IB=0mA
1mA
2mA
3mA
5mA
8mA
10mA
15mA
T
a=75
°C
25
°C
-
-25
°C
30mA
50mA
20mA
VCE=2V
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