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參數(shù)資料
| 型號(hào)： | MCH3218 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, MCPH3, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | MCH3218 |
MCH3218
No.8184-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=750mA, IB=15mA
115
175
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=750mA, IB=15mA
0.83
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0
40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0
5
V
Turn-ON Time
ton
See specified Test Circuit.
35
ns
Storage Time
tstg
See specified Test Circuit.
205
ns
Fall Time
tf
See specified Test Circuit.
32
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
2194A
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
VR
RB
VCC=12V
VBE= --5V
+
50
INPUT
OUTPUT
RL
100
F
470
F
PW=20
s
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=750mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
0.9
0.6
0.3
1.5
1.2
0
1.5
1.0
0.5
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT09005
IT09006
IB=0
1mA
10mA
4mA
3mA
8mA
T
a=75
°C
25
°C
--25
°C
6mA
2mA
15mA
50mA
30mA
20mA
40mA
VCE=2V
5mA
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