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參數(shù)資料
| 型號： | MCH3217 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, MCPH3, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | MCH3217 |
MCH3217
No.8183-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=750mA, IB=15mA
80
120
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=750mA, IB=15mA
0.83
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
160
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
2194A
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
VR
RB
VCC=5V
VBE= --5V
+
50
INPUT
OUTPUT
RL
220
F
470
F
PW=20
s
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=750mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
0.9
0.6
0.3
1.5
1.2
0
0.5
1.0
1.5
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.8
0.6
1.0
0.1
0.3
0.7
0.5
0.9
VCE=2V
IT09014
IT09015
T
a=
-
-25
°C
25
°C
75
°C
50mA
40mA
30mA
IB=0
1mA
10mA
15mA
3mA
5mA
4mA
2mA
20mA
8mA
6mA
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