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參數(shù)資料
| 型號： | MCH3211 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, MCPH3, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 254K |
| 代理商： | MCH3211 |
MCH3211
No.7016-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1.5A, IB=30mA
100
150
mV
VCE(sat)2
IC=3A, IB=60mA
180
270
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1.5A, IB=30mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
10
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0
5
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
210
ns
Fall Time
tf
See specified Test Circuit.
11
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
2194A
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
VR
1k
VCC=5V
VBE= --5V
+
50
INPUT
OUTPUT
RL
220
F
470
F
PW=20
s
IB1
D.C.
≤1%
IB2
20IB1= --20IB2=IC=1.5A
3
2
1
5
4
0
3
2
1
5
4
0
0.2
0.4
0.6
0.8
1.0
0
12
4
3
5
IC -- VCE
IT01588
IT01589
IB=0
1mA
10mA
15mA
20mA
40mA
3mA
5mA
1mA
2mA
10mA
15mA
20mA
25mA
4mA
6mA
8mA
4mA
2mA
25mA
60mA
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
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相關代理商/技術參數(shù) |
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