The average chip-junction" />
參數(shù)資料
型號: MCF52232AF50
廠商: Freescale Semiconductor
文件頁數(shù): 25/55頁
文件大?。?/td> 0K
描述: IC MCU 32BIT 128K FLASH 80-LQFP
標(biāo)準(zhǔn)包裝: 90
系列: MCF5223x
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 50MHz
連通性: 以太網(wǎng),I²C,SPI,UART/USART
外圍設(shè)備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 56
程序存儲器容量: 128KB(128K x 8)
程序存儲器類型: 閃存
RAM 容量: 32K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x12b
振蕩器型: 內(nèi)部
工作溫度: 0°C ~ 70°C
封裝/外殼: 80-LQFP
包裝: 托盤
Electrical Characteristics
MCF52235 ColdFire Microcontroller Data Sheet, Rev. 10
Freescale Semiconductor
31
The average chip-junction temperature (TJ) in C can be obtained from
Eqn. 1
where
TA = ambient temperature, C
JMA = package thermal resistance, junction-to-ambient, C/W
PD =PINT + PI/O
PINT = chip internal power, IDD VDD, watts
PI/O = power dissipation on input and output pins — user determined
For most applications, PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is neglected) is:
Eqn. 2
Solving equations 1 and 2 for K gives:
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
2.2
ESD Protection
Table 21. ESD Protection Characteristics1
1 A device is defined as a failure if the device no longer meets the device specification requirements after
exposure to ESD pulses. Complete DC parametric and functional testing is performed per applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Characteristic
Symbol
Value
Units
ESD target for Human Body Model
HBM
1500 (ADC and EPHY pins)
2000 (All other pins)
V
ESD target for Charged Device Model
CDM
250
V
HBM circuit description
Rseries
1500
ohms
C100
pF
Number of pulses per pin (HBM)
positive pulses
negative pulses
1
Number of pulses per pin (CDM)
positive pulses
negative pulses
3
Interval of pulses (HBM)
1.0
sec
Interval of pulses (CDM)
0.2
sec
TJ
TA
PD JMA
+
=
PD
KTJ 273C
+
=
KPD
TA 273C
+
JMA
PD
2
+
=
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