參數(shù)資料
型號: MCF5213CAF80
廠商: Freescale Semiconductor
文件頁數(shù): 24/56頁
文件大?。?/td> 0K
描述: IC MCU 256K FLASH 80MHZ 100-LQFP
標準包裝: 90
系列: MCF521x
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 80MHz
連通性: CAN,I²C,SPI,UART/USART
外圍設(shè)備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 55
程序存儲器容量: 256KB(256K x 8)
程序存儲器類型: 閃存
RAM 容量: 32K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 100-LQFP
包裝: 托盤
配用: M5213EVBE-ND - KIT EVAL FOR MCF5213
M5211DEMO-ND - KIT DEMO FOR MCF5211
MCF5213 ColdFire Microcontroller, Rev. 3
Electrical Characteristics
Freescale Semiconductor
30
2.4
Flash Memory Characteristics
The flash memory characteristics are shown in Table 23 and Table 24.
The average chip-junction temperature (TJ) in °C can be obtained from:
(1)
Where:
TA
= ambient temperature,
°C
Θ
JA
= package thermal resistance, junction-to-ambient,
°C/W
PD
= PINT + PI/O
PINT
= chip internal power, IDD × VDD, watts
PI/O
= power dissipation on input and output pins — user determined, watts
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD × (TA + 273 °C) + ΘJMA × PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1) and (2) iteratively for
any value of TA.
Table 23. SGFM Flash Program and Erase Characteristics
(VDDF = 2.7 to 3.6 V)
Parameter
Symbol
Min
Typ
Max
Unit
System clock (read only)
fsys(R)
0—
66.67 or 801
1
Depending on packaging; see Table 2.
MHz
System clock (program/erase)2
2
Refer to the flash memory section for more information
fsys(P/E)
0.15
66.67 or 801
MHz
Table 24. SGFM Flash Module Life Characteristics
(VDDF = 2.7 to 3.6 V)
Parameter
Symbol
Value
Unit
Maximum number of guaranteed program/erase cycles1 before failure
1 A program/erase cycle is defined as switching the bits from 1
→ 0 → 1.
P/E
10,0002
2 Reprogramming of a flash memory array block prior to erase is not required.
Cycles
Data retention at average operating temperature of 85
°C
Retention
10
Years
T
J
T
A
P
D
Θ
JMA
×
()
+
=
P
D
KT
J
273
°C
+
()
÷
=
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