參數(shù)資料
型號(hào): MCF51JE128CMB
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 35/47頁(yè)
文件大小: 0K
描述: IC MCU 128K COLDF 81-PBGA
標(biāo)準(zhǔn)包裝: 1,200
系列: MCF51JE
核心處理器: Coldfire V1
芯體尺寸: 32-位
速度: 50MHz
連通性: CAN,EBI/EMI,I²C,SCI,SPI,USB OTG
外圍設(shè)備: LVD,PWM,WDT
輸入/輸出數(shù): 48
程序存儲(chǔ)器容量: 128KB(128K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 32K x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 12x12b,D/A 1x12b
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 81-LBGA
包裝: 托盤(pán)
MCF51JE256 Datasheet, Rev. 4
Preliminary Electrical Characteristics
Freescale Semiconductor
40
3.14
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51JE256RM).
3.15
USB Electricals
The USB electricals for the USB On-the-Go module conform to the standards documented by the
Universal Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org.
If the Freescale USB On-the-Go implementation has electrical characteristics that deviate from the
standard or require additional information, this space would be used to communicate that information.
Table 23. Flash Characteristics
#
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
C
1
Supply voltage for program/erase
-40
C to 105CV
prog/erase
1.8
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
3.6
V
D
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5—
6.67
sD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40C to + 105C
T = 25
C
3
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
100,000
cycles
C
10
Data retention4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25
C using
the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618,
Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
years
C
Table 24. Internal USB 3.3 V Voltage Regulator Characteristics
#
Characteristic
Symbol
Minimum
Typical
Maximu
m
Unit
C
1
Regulator operating voltage
Vregin
3.9
5.5
V
C
2VREG output
Vregout
3
3.3
3.75
V
P
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