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參數(shù)資料
| 型號： | MCA104 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 中文描述： | 600 mA, 40 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-18 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | MCA104 |
I
C
= 20mA
V
CB
= 10V
V
BE
= 0.5V
I
C
= 1mA
I
C
= 10mA
V
CE
= 20V
I
E
= 0
I
C
= 0
V
CE
= 10V
V
CE
= 10V
f =100MHz
f = 1.0MHz
f = 1.0MHz
f = 1kHz
f = 1kHz
Prelim. 4/00
MCA104
Semelab plc.
Telephone +44(0)1455 556565.
E-mail:
sales@semelab.co.uk
Fax +44(0)1455 552612.
Website:
ParameterDelay Time
Rise Time
Storage Time
Fall Time
Test Conditions
V
CC
= 30V
I
C1
= 150mA
V
CC
= 30V
I
B1
= I
B2
= 15mA
Min.
Typ.
Max.
10
25
225
60
Unit
ns
ns
ns
ns
t
d
t
r
t
s
t
f
fTis defined as the frequency at which hFEextrapolates to unity.
Parameter
Transition Frequency
Output Capacitance
Input Capacitance
Test Conditions
Min.
300
Typ.
Max.
Unit
MHz
pF
pF
Parameter
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current (I
C
= 0)
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
B
= 0
I
E
= 0
T
C
= 125°C
I
C
= 0
V
CE
= 60V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 10mA
I
C
= 150mA
I
C
= 150mA
I
C
= 500mA
Min.
40
75
6
Typ.
Max.
Unit
V
V
V
nA
nA
m
A
nA
nA
I
C
= 0
V
CE
= 60V
V
CB
= 60V
V
EB
= 3V (off)
V
EB
= 3V (off)
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 1V
V
CE
= 10V
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
NPN DEVICES
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEX*
I
CBO*
Collector – Base Cut-off Current
I
EBO*
I
BL*
Emitter Cut-off Current (I
C
= 0)
Base Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
A
= –55°C
10
10
10
10
20
0.3
1
1.2
2
0.6
35
50
75
35
100
50
40
300
V
V
—
f
T
C
ob
C
ib
hfe
Small Signal Current Gain
8
30
300
375
50
75
V
BE
= 0.5V (off)
I
B1
= 15mA
I
C
= 150mA
* Pulse test t
p
= 300
m
s ,
d ￡
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
NPN DEVICES
SWITCHING CHARACTERISTICS (RESISTIVE LOAD)
(Tcase= 25°C unless otherwise stated)
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