
Device User Guide — 9S12C128DGV1/D V01.05
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B.5.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at
<2ppm defects over lifetime
at the operating conditions noted.
A program/erase cycle is specified as two transitions of the cell value from erased
→ programmed →
erased, 1
→ 0 → 1.
NOTE:
All values shown in Table B-9 are target values and subject to further extensive characterization.
Table B-9 NVM Reliability Characteristics
Conditions are shown in
Table A-4 unless otherwise noted
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1C
Data Retention at an average junction temperature of
TJavg = 85°C
tNVMRET
15
Years
2
C
Flash number of Program/Erase cycles
nFLPE
10,000
Cycles