Chapter 19 64 Kbyte Flash Module (S12FTS64KV4)
564
MC9S12C-Family / MC9S12GC-Family
Freescale Semiconductor
Rev 01.24
19.4.1.3.2
Program Command
The program operation will program a previously erased word in the Flash array using an embedded
algorithm.
An example ow to execute the program operation is shown in
Figure 19-26. The program command write
sequence is as follows:
1. Write to a Flash array address to start the command write sequence for the program command. The
data written will be programmed to the Flash array address written.
2. Write the program command, 0x20, to the FCMD register.
3. Clear the CBEIF ag in the FSTAT register by writing a 1 to CBEIF to launch the program
command.
If a word to be programmed is in a protected area of the Flash array, the PVIOL ag in the FSTAT register
will set and the program command will not launch. Once the program command has successfully launched,
the CCIF ag in the FSTAT register will set after the program operation has completed unless a new
command write sequence has been buffered. By executing a new program command write sequence on
sequential words after the CBEIF ag in the FSTAT register has been set, up to 55% faster programming
time per word can be effectively achieved than by waiting for the CCIF ag to set after each program
operation.