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參數(shù)資料
| 型號： | MC9S08SV8CLC |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, QFP32 |
| 封裝： | 7 X 7 MM, 1.40 MM HEIGHT, 0.80 MM PITRCH, ROHS COMPLIANT, MS-026BBA, LQFP-32 |
| 文件頁數(shù)： | 25/40頁 |
| 文件大?。?/td> | 749K |
| 代理商： | MC9S08SV8CLC |
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Electrical Characteristics
MC9S08SV16 Series Data Sheet, Rev. 2
Freescale Semiconductor
31
5.13
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
5.13.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (the North and East).
Table 16. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
–40
°C to 85 °C
Vprog/erase
2.7
—
5.5
V
D
Supply voltage for read operation
VRead
2.7
—
5.5
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
5—
6.67
μs
P
Byte program time (random location)2
tprog
9tFcyc
P
Byte program time (burst mode)2
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time2
tMass
20,000
tFcyc
C
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 5.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
C
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40 °C to 85 °C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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