參數(shù)資料
型號： MC9S08SF4CTG
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： MICROCONTROLLER, PDSO16
封裝： 0.65 MM PITCH, ROHS COMPLIANT, TSSOP-16
文件頁數(shù)： 15/32頁
文件大小： 564K
代理商： MC9S08SF4CTG
MC9S08SF4 Series MCU Data Sheet, Rev. 2
Flash Specifications
Freescale Semiconductor
22
3.12
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
10
D Programmable reference generator inputs
VIn1
(VDD50)
2.7
5.0
5.5
V
11
D Programmable reference generator inputs
VIn2
(VDD25)
2.25
2.5
2.75
V
12
C Programmable reference generator step size
Vstep
–0.25
0
0.25
LSB
13
P Programmable reference generator voltage range
Vprgout
VIn/32
—
Vin
V
Table 13. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
–40
°C to 125°C
Vprog/erase
2.7
—
5.5
V
Supply voltage for read operation
VRead
2.7
—
5.5
V
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
μs
Byte program time (random location)(2)
tprog
9tFcyc
Byte program time (burst mode)(2)
tBurst
4tFcyc
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tPage
4000
tFcyc
Mass erase time(2)
tMass
20,000
tFcyc
Program/erase endurance3
TL to TH = –40 °C to 125 °C
T = 25
°C
3 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Delta
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Delta defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
Table 12. PRACMP Specifications (continued)
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9S08SF4CTJ 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data
MC9S08SF4MTG 功能描述:8位微控制器 -MCU 9S08SF4 16TSSOP RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MC9S08SF4MTJ 功能描述:8位微控制器 -MCU 9S08SF4 20TSSOP RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MC9S08SF4VTG 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data
MC9S08SF4VTJ 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data
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