
Memory
MC9S08RC/RD/RE/RG Data Sheet, Rev. 1.11
46
Freescale Semiconductor
program time provided that the conditions above are met. In the case where the next sequential address is
the beginning of a new row, the program time for that byte will be the standard time instead of the burst
time. This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
Figure 4-4. FLASH Burst Program Flowchart
4.4.5
Access Errors
An access error occurs whenever the command execution protocol is violated.
Any of the following specic actions will cause the access error ag (FACCERR) in FSTAT to be set.
FACCERR must be cleared by writing a 1 to FACCERR in FSTAT before any command can be processed:
1
0
FCBEF ?
START
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
NO
YES
FPVIO OR
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF (2)
NO
YES
NEW BURST COMMAND ?
1
0
FCCF ?
ERROR EXIT
DONE
(2) Wait at least four cycles before
checking FCBEF or FCCF.
1
0
FACCERR ?
CLEAR ERROR
FACCERR ?
WRITE TO FCDIV(1)
(1) Required only once
after reset.