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| 型號： | MC9S08QE32CLC |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP32 |
| 封裝： | 7 X 7 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, MS-026BBA, LQFP-32 |
| 文件頁數(shù)： | 22/46頁 |
| 文件大?。?/td> | 985K |
| 代理商： | MC9S08QE32CLC |
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Electrical Characteristics
MC9S08QE32 Series MCU Data Sheet, Rev. 6
Freescale Semiconductor
29
3.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see MC9S08QE32 Series Reference
Manual Chapter 4 Memory.
1 Typical values assume V
DDAD = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2 1 LSB = (V
REFH – VREFL)/2
N
3 Monotonicity and No-missing-codes guaranteed in 10-bit and 8-bit modes
4 Based on input pad leakage current. Refer to pad electricals.
Table 18. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
–40
°C to 85 °C
Vprog/erase
1.8
—
3.6
V
D
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by software setting.
fFCLK
150
—
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
5—
6.67
μs
P
Byte program time (random location)(2)
tprog
9tFcyc
P
Byte program time (burst mode)(2)
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information is
supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time(2)
tMass
20,000
tFcyc
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40 °C to 85 °C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC9S08QE32CLC | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 50MHZ LQFP-32 |
| MC9S08QE32CLCR | 功能描述:8位微控制器 -MCU 9S08QE32-C&I-32LQFP RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| MC9S08QE32CLD | 功能描述:8位微控制器 -MCU 9S08QE32-C&I-44LQFP RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| MC9S08QE32CLD | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HC08 50MHZ LQFP-44 |
| MC9S08QE32CWL | 功能描述:8位微控制器 -MCU 9S08QE32-C&I-28SOICW RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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