參數(shù)資料
型號: MC9S08QA2CDNE
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: MICROCONTROLLER, PDSO8
封裝: ROHS COMPLIANT, MS-012AA, SOIC-8
文件頁數(shù): 30/32頁
文件大小: 2368K
代理商: MC9S08QA2CDNE
Electrical Characteristics
MC9S08QA4 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
7
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
3.5
DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 4. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
3
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 5. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
V
2
Machine model (MM)
VMM
±200
V
3
Charge device model (CDM)
VCDM
±500
V
4
Latch-up current at TA = 85°CILAT
±100
mA
Table 6. DC Characteristics (Temperature Range = –40 to 85
°C Ambient)
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage (run, wait, and stop modes)
V
(VDD falling)
VDD
1.8
3.6
(VDD rising)
VLVDL
(rising)
—3.6
Minimum RAM retention supply voltage applied to VDD
VRAM
Vpor
1,2
——
V
Low-voltage detection threshold
(VDD falling)
VLVD
1.80
1.82
1.91
V
(VDD rising)
1.88
1.90
1.99
Low-voltage warning threshold
(VDD falling)
VLVW
2.08
2.1
2.2
V
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相關代理商/技術參數(shù)
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