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參數(shù)資料
| 型號： | MC9RS08KA4CPJ |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP20 |
| 封裝： | 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-20 |
| 文件頁數(shù)： | 40/42頁 |
| 文件大?。?/td> | 949K |
| 代理商： | MC9RS08KA4CPJ |
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Electrical Characteristics
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
7
The average chip-junction temperature (TJ) in
°C can be obtained from:
TJ = TA + (PD × θJA)
Eqn. 1
where:
TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C /W
PD = Pint + PI/O
Pint = IDD × VDD, Watts chip internal power
PI/O = Power dissipation on input and output pins user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (T+ 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA× (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving equations 1 and 2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Thermal resistance 16-pin TSSOP
θ
JA
75
°C/W
Thermal resistance 20-pin PDIP
θ
JA
75
°C/W
Thermal resistance 20-pin SOIC
θ
JA
96
°C/W
Table 4. Thermal Characteristics (continued)
Rating
Symbol
Value
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC9RS08KA8CPG | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP16 |
| MC9RS08KB2CSC | MICROCONTROLLER, PDSO8 |
| MC9RS08KB4CTG | MICROCONTROLLER, PDSO16 |
| MC9RS08KB12CTG | MICROCONTROLLER, PDSO16 |
| MC9RS08KB4CWJ | MICROCONTROLLER, PDSO20 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC9RS08KA4CTG | 功能描述:8位微控制器 -MCU GEN PURPOSE 8-BIT RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9RS08KA4CTGR | 功能描述:8位微控制器 -MCU FINISHED GOOD RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9RS08KA4CWG | 功能描述:8位微控制器 -MCU 9RS08KA8 16SOIC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9RS08KA4CWGR | 功能描述:8位微控制器 -MCU 9RS08KA8 16SOIC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9RS08KA4CWJ | 功能描述:8位微控制器 -MCU 9RS08KA8 20SOIC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
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