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| 型號(hào)： | MC908QT4VDWE |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDSO8 |
| 封裝： | LEAD FREE, SOIC-8 |
| 文件頁(yè)數(shù)： | 114/184頁(yè) |
| 文件大?。?/td> | 1659K |
| 代理商： | MC908QT4VDWE |
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FLASH Memory (FLASH)
MC68HC908QY/QT Family Data Sheet, Rev. 6
Freescale Semiconductor
35
2.6.3 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory to read as a 1:
1.
Set both the ERASE bit and the MASS bit in the FLASH control register.
2.
Read the FLASH block protect register.
3.
Write any data to any FLASH address(1) within the FLASH memory address range.
4.
Wait for a time, tNVS (minimum 10 μs).
5.
Set the HVEN bit.
6.
Wait for a time, tMErase (minimum 4 ms).
7.
Clear the ERASE and MASS bits.
NOTE
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
8.
Wait for a time, tNVHL (minimum 100 μs).
9.
Clear the HVEN bit.
10.
After time, tRCV (typical 1 μs), the memory can be accessed in read mode again.
NOTE
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
CAUTION
A mass erase will erase the internal oscillator trim values at $FFC0 and
$FFC1.
2.6.4 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, or $XXE0. Use the
following step-by-step procedure to program a row of FLASH memory
Figure 2-4 shows a flowchart of the programming algorithm.
NOTE
Only bytes which are currently $FF may be programmed.
1.
Set the PGM bit. This configures the memory for program operation and enables the latching of
address and data for programming.
2.
Read the FLASH block protect register.
3.
Write any data to any FLASH location within the address range desired.
4.
Wait for a time, tNVS (minimum 10 μs).
5.
Set the HVEN bit.
6.
Wait for a time, tPGS (minimum 5 μs).
7.
Write data to the FLASH address being programmed(2).
1. When in monitor mode, with security sequence failed (see 15.3.2 Security), write to the FLASH block protect register
instead of any FLASH address.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC908QT4CPE | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDIP8 |
| MC908QY2VDTE | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDSO16 |
| MC908QY2VPE | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDIP16 |
| MC908QY4VDWE | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDSO16 |
| MC908QT2CFQE | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC908QT4VDWR2 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MC908QT4VFQE | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:M68HC08 Microcontrollers |
| MC908QT4VPE | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:M68HC08 Microcontrollers |
| MC908QVY4CDWER | 制造商:Freescale Semiconductor 功能描述:3V NITRON LOFT |
| MC908QY1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Microcontrollers |
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