參數(shù)資料
型號: MC7808BDTRKG
廠商: ON SEMICONDUCTOR
元件分類: 基準電壓源/電流源
英文描述: THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
中文描述: 8 V FIXED POSITIVE REGULATOR, PSSO2
封裝: LEAD FREE,DPAK-3
文件頁數(shù): 8/16頁
文件大?。?/td> 278K
代理商: MC7808BDTRKG
MC7800, MC7800A, LM340, LM340A Series
8
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS (continued)
(Vin = 19 V, IO = 500 mA, TJ = Tlow to Thigh [Note 1], unless otherwise noted.)
MC7812C/LM340T–12
Characteristic
Symbol
Min
Typ
Max
Unit
Output Noise Voltage (TA = 25
°
C)
10 Hz
f
100 kHz
Vn
10
μ
V/VO
Output Resistance f = 1.0 kHz
rO
ISC
1.1
m
Short Circuit Current Limit (TA = 25
°
C)
Vin = 35 Vdc
Peak Output Current (TJ = 25
°
C)
Average Temperature Coefficient of Output Voltage
0.2
A
Imax
TCVO
2.2
A
–0.8
mV/
°
C
ELECTRICAL CHARACTERISTICS
(Vin = 19 V, IO = 1.0 A, TJ = Tlow to Thigh [Note 1], unless otherwise noted.)
MC7812AC/LM340AT–12
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (TJ = 25
°
C)
Output Voltage (5.0 mA
IO
1.0 A, PD
15 W)
14.8 Vdc
Vin
27 Vdc
Line Regulation (Note 2)
14.8 Vdc
Vin
30 Vdc, IO = 500 mA
16 Vdc
Vin
22 Vdc, IO = 1.0 A
14.5 Vdc
Vin
27 Vdc, TJ = 25
°
C
Load Regulation (Note 2)
5.0 mA
IO
1.5 A, TJ = 25
°
C
5.0 mA
IO
1.0 A
Quiescent Current
VO
VO
11.75
12
12.25
Vdc
11.5
12
12.5
Vdc
Regline
mV
3.8
2.2
6.0
18
20
120
Regload
mV
25
25
IB
IB
3.4
6.0
mA
Quiescent Current Change
15 Vdc
Vin
30 Vdc, IO = 500 mA
14.8 Vdc
Vin
27 Vdc, TJ = 25
°
C
5.0 mA
IO
1.0 A, TJ = 25
°
C
Ripple Rejection
15 Vdc
Vin
25 Vdc, f = 120 Hz, IO = 500 mA
Dropout Voltage (IO = 1.0 A, TJ = 25
°
C)
Output Noise Voltage (TA = 25
°
C)
10 Hz
f
100 kHz
mA
0.8
0.8
0.5
RR
55
60
dB
VI – VO
Vn
2.0
Vdc
10
μ
V/VO
Output Resistance (f = 1.0 kHz)
rO
ISC
1.1
m
Short Circuit Current Limit (TA = 25
°
C)
Vin = 35 Vdc
Peak Output Current (TJ = 25
°
C)
Average Temperature Coefficient of Output Voltage
0.2
A
Imax
TCVO
2.2
A
–0.8
mV/
°
C
NOTES:
1.Tlow = –40
°
C for MC78XXAC, C, LM340AT–XX, LM340T–XX Thigh = +125
°
C for MC78XXAC, C, LM340AT–XX, LM340T–XX
2.Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account
separately. Pulse testing with low duty cycle is used.
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