VCC Positive DC Supply Volt" />
參數(shù)資料
型號(hào): MC74VHCT259ADTR2
廠商: ON Semiconductor
文件頁數(shù): 5/10頁
文件大?。?/td> 0K
描述: IC LATCH ADDRESSABL 8BIT 16TSSOP
產(chǎn)品變化通告: Product Obsolescence 24/Jan/2011
標(biāo)準(zhǔn)包裝: 2,500
系列: 74VHCT
邏輯類型: D 型,可尋址
電路: 1:8
輸出類型: 標(biāo)準(zhǔn)
電源電壓: 4.5 V ~ 5.5 V
獨(dú)立電路: 1
延遲時(shí)間 - 傳輸: 6ns
輸出電流高,低: 8mA,8mA
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 16-TSSOP
包裝: 帶卷 (TR)
其它名稱: MC74VHCT259ADTR2OS
MC74VHCT259ADTR2OS-N
MC74VHCT259ADTROS
MC74VHCT259A
http://onsemi.com
4
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
Positive DC Supply Voltage
0.5 to +7.0
V
VIN
Digital Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
Output in 3State
High or Low State
0.5 to +7.0
0.5 to VCC +0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
$20
mA
IOUT
DC Output Current, per Pin
$25
mA
ICC
DC Supply Current, VCC and GND Pins
$75
mA
PD
Power Dissipation in Still Air
SOIC Package
TSSOP
200
180
mW
TSTG
Storage Temperature Range
65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>2000
>200
>2000
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
$300
mA
qJA
Thermal Resistance, JunctiontoAmbient
SOIC Package
TSSOP
143
164
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Tested to EIA/JESD22A114A
2. Tested to EIA/JESD22A115A
3. Tested to JESD22C101A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
4.5
5.5
V
VIN
DC Input Voltage
0
5.5
V
VOUT
DC Output Voltage
Output in 3State
High or Low State
0
5.5
VCC
V
TA
Operating Temperature Range, all Package Types
55
125
°C
tr, tf
Input Rise or Fall Time
VCC = 5.0 V + 0.5 V
0
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO
0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
T J
=
90
T J
=
100
T J
=
1
10
T J
=
130
T J
=
120
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 5. Failure Rate vs. Time Junction Temperature
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