MC74VHC259
http://onsemi.com
4
MAXIMUM RATINGS (Note 1.) Symbol
Parameter
Value
Unit
VCC
Positive DC Supply Voltage
0.5 to +7.0
V
VIN
Digital Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
0.5 to VCC +0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
$20
mA
IOUT
DC Output Current, per Pin
$25
mA
ICC
DC Supply Current, VCC and GND Pins
$75
mA
PD
Power Dissipation in Still Air
SOIC Package
TSSOP
200
180
mW
TSTG
Storage Temperature Range
65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note
2.)Charged Device Model (Note
4.)>2000
>200
>2000
V
ILATCHUP
LatchUp Performance
Above VCC and Below GND at 125°C (Note 5.) $300
mA
qJA
Thermal Resistance, Junction to Ambient
SOIC Package
TSSOP
143
164
°C/W
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0
5.5
V
VOUT
DC Output Voltage
0
VCC
V
TA
Operating Temperature Range, all Package Types
55
125
°C
tr, tf
Input Rise or Fall Time
VCC = 3.3 V + 0.3 V
VCC = 5.0 V + 0.5 V
0
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
C°
T J
=
90
C°
T J
=
100
C°
T J
=
1
10
C°
T J
=
130
C°
T J
=
120
C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 5. Failure Rate vs. Time Junction Temperature