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參數(shù)資料
型號: MC74VHC1G135DFT1
廠商: ON Semiconductor
文件頁數(shù): 2/6頁
文件大?。?/td> 0K
描述: IC GATE NAND SGL 2INP OD SOT-353
產(chǎn)品變化通告: LTB Notification 03/Jan/2008
標準包裝: 3,000
系列: 74VHC
邏輯類型: 與非門
電路數(shù): 1
輸入數(shù): 2
特點: 施密特觸發(fā)器,開路漏極
電源電壓: 2 V ~ 5.5 V
電流 - 靜態(tài)(最大值): 1µA
輸出電流高,低: -,8mA
邏輯電平 - 低: 0.65 V ~ 1.45 V
邏輯電平 - 高: 2.25 V ~ 3.7 V
額定電壓和最大 CL 時的最大傳播延遲: 9.7ns @ 4.5V ~ 5.5V,50pF
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
供應商設(shè)備封裝: SC-70
封裝/外殼: 6-TSSOP(5 引線),SC-88A,SOT-353
包裝: 帶卷 (TR)
MC74VHC1G135
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
0.5 to +7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
0.5 to 7.0
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air
SC88A, TSOP5
200
mW
qJA
Thermal resistance
SC88A, TSOP5
333
°C/W
TL
Lead temperature, 1 mm from case for 10 secs
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
65 to +150
°C
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 200
N/A
V
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22A114A
2. Tested to EIA/JESD22A115A
3. Tested to JESD22C101A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
7.0
V
TA
Operating Temperature Range
55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
No limit
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
T J
=
90
T J
=
100
T J
=
1
10
T J
=
130
T J
=
120
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
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