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參數(shù)資料
型號: MC74VHC1G04DTT1G
廠商: ON Semiconductor
文件頁數(shù): 2/6頁
文件大小: 0K
描述: IC INVERTER SGL HS CMOS 5TSOP
標準包裝: 1
系列: 74VHC
邏輯類型: 逆變器,緩沖器
電路數(shù): 1
輸入數(shù): 1
電源電壓: 2 V ~ 5.5 V
電流 - 靜態(tài)(最大值): 1µA
輸出電流高,低: 8mA,8mA
邏輯電平 - 低: 0.5 V ~ 1.65 V
邏輯電平 - 高: 1.5 V ~ 3.85 V
額定電壓和最大 CL 時的最大傳播延遲: 7.5ns @ 4.5V ~ 5.5V,50pF
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
供應商設備封裝: 5-TSOP
封裝/外殼: 6-TSOP(0.059",1.50mm 寬)5 引線
包裝: 標準包裝
產品目錄頁面: 1124 (CN2011-ZH PDF)
其它名稱: MC74VHC1G04DTT1GOSDKR
MC74VHC1G04
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
*0.5 to )7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
*0.5 to VCC )0.5
V
IIK
DC Input Diode Current
20
mA
IOK
DC Output Diode Current
±20
mA
IOUT
DC Output Sink Current
±12.5
mA
ICC
DC Supply Current per Supply Pin
±25
mA
TSTG
Storage Temperature Range
*65 to )150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature Under Bias
)150
°C
qJA
Thermal Resistance
SC705/SC88A (Note 1)
TSOP5
350
230
°C/W
PD
Power Dissipation in Still Air at 85°CSC705/SC88A
TSOP5
150
200
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 5)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED
F
AILURE
RA
TE
TIME, YEARS
T
J=
1
30
°C
T
J=
1
20
°C
T
J=
1
10
°C
T
J=
1
00
°C
T
J=
9
C
T
J=
8
C
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