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參數(shù)資料
型號(hào): MC74VHC00DTR2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 0K
描述: IC GATE NAND QUAD 2INP 14-TSSOP
標(biāo)準(zhǔn)包裝: 1
系列: 74VHC
邏輯類型: 與非門
電路數(shù): 4
輸入數(shù): 2
電源電壓: 2 V ~ 5.5 V
電流 - 靜態(tài)(最大值): 2µA
輸出電流高,低: 8mA,8mA
邏輯電平 - 低: 0.5V
邏輯電平 - 高: 1.5V
額定電壓和最大 CL 時(shí)的最大傳播延遲: 7.5ns @ 5V,50pF
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
供應(yīng)商設(shè)備封裝: 14-TSSOP
封裝/外殼: 14-TSSOP(0.173",4.40mm 寬)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: MC74VHC00DTR2GOSDKR
MC74VHC00
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
V
TA = 25°C
TA = 40 to
85°C
TA = 55 to
+125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
HighLevel Input
Voltage
2.0
3.0 to
5.5
1.50
VCC x
0.7
1.50
VCC x
0.7
1.50
VCC x
0.7
V
VIL
LowLevel Input
Voltage
2.0
3.0 to
5.5
0.50
VCC x
0.3
0.50
VCC x
0.3
0.50
VCC x
0.3
V
VOH
HighLevel
Output Voltage
Vin = VIH or VIL
IOH = 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
Vin = VIH or VIL
IOH = 4 mA
IOH = 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.40
3.70
VOL
LowLevel
Output Voltage
Vin = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0.0
0.1
0.1
0.1
V
Vin = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
0.55
Iin
Input Leakage
Current
Vin = 5.5 V or GND
0 to 5.5
$0.1
$1.0
$2.0
mA
ICC
Quiescent Supply
Current
Vin = VCC or GND
5.5
2.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
TA = 25°C
TA = 40 to
85°C
TA = 55 to
+125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Propagation
Delay, A or B to Y
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
5.5
8.0
7.9
11.4
1.0
9.5
13.0
1.0
10
14.5
ns
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
3.7
5.2
5.5
7.5
1.0
6.5
8.5
1.0
7.0
9.5
Cin
Input
Capacitance
4.0
10
10
10
pF
CPD
Power Dissipation Capacitance (Note 5)
Typical @ 25°C, VCC = 5.0 V
pF
19
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/4 (per gate). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V, Measured in SOIC Package)
Symbol
Characteristic
TA = 25°C
Unit
Typ
Max
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
0.3
0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
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