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參數(shù)資料
型號(hào): MC74LVX4066DR2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 7/13頁(yè)
文件大小: 0K
描述: IC MUX/DEMUX QUAD 1X1 14SOIC
標(biāo)準(zhǔn)包裝: 1
系列: 74LVX
功能: 多路復(fù)用器/多路分解器
電路: 4 x 1:1
導(dǎo)通狀態(tài)電阻: 30 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 2 V ~ 6 V
電流 - 電源: 40µA
工作溫度: -55°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOICN
包裝: 剪切帶 (CT)
其它名稱: MC74LVX4066DR2GOSCT
MC74LVX4066
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
Positive DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
VIS
Analog Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vin
Digital Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Current Into or Out of ON/OFF Control Pins
± 20
mA
Is
DC Current Into or Out of Switch Pins
± 20
mA
PD
Power Dissipation in Still Air,
SOIC Package
TSSOP Package
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not im-
plied. Extended exposure to stresses above the Recommended Operating Conditions may af-
fect device reliability.
Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
Positive DC Supply Voltage (Referenced to GND)
2.0
6.0
V
VIS
Analog Input Voltage (Referenced to GND)
GND
VCC
V
Vin
Digital Input Voltage (Referenced to GND)
GND
VCC
V
VIO*
Static or Dynamic Voltage Across Switch
1.2
V
TA
Operating Temperature, All Package Types
– 55
+ 85
_C
tr, tf
Input Rise and Fall Time, ON/OFF Control
Inputs (Figure 10)
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
*For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may
be drawn; i.e., the current out of the switch may contain both VCC and switch input
components. The reliability of the device will be unaffected unless the Maximum Ratings are
exceeded.
DC ELECTRICAL CHARACTERISTIC Digital Section (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to 25_C
v 85_C
v 125_C
VIH
Minimum HighLevel Voltage
ON/OFF Control Inputs (Note 1)
Ron = Per Spec
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
VIL
Maximum LowLevel Voltage
ON/OFF Control Inputs (Note 1)
Ron = Per Spec
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
Iin
Maximum Input Leakage Current
ON/OFF Control Inputs
Vin = VCC or GND
5.5V
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND VIO = 0 V
5.5
4.0
40
160
mA
1. Specifications are for design target only. Not final specification limits.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
I/O pins must be connected to a
properly terminated line or bus.
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