參數(shù)資料
型號(hào): MC74LCX244
廠商: ON SEMICONDUCTOR
英文描述: LOW-VOLTAGE CMOS OCTAL BUFFER
中文描述: 低電壓CMOS八進(jìn)制緩沖區(qū)
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 152K
代理商: MC74LCX244
MC74LCX244
MOTOROLA
LCX DATA
BR1339 — REV 3
4
DC ELECTRICAL CHARACTERISTICS
(continued)
TA = –40
°
C to +85
°
C
Symbol
Characteristic
Condition
Min
Max
Unit
II
Input Leakage Current
2.7V
VCC
3.6V; 0V
VI
5.5V
2.7
VCC
3.6V; 0V
VO
5.5V;
VI = VIH or V IL
±
5.0
μ
A
IOZ
3–State Output Current
±
5.0
μ
A
IOFF
Power–Off Leakage Current
VCC = 0V; VI or VO = 5.5V
2.7
VCC
3.6V; VI = GND or VCC
2.7
VCC
3.6V; 3.6
VI or VO
5.5V
2.7
VCC
3.6V; VIH = VCC – 0.6V
10
μ
A
ICC
Quiescent Supply Current
10
μ
A
±
10
μ
A
ICC
Increase in ICC per Input
500
μ
A
AC CHARACTERISTICS
(tR = tF = 2.5ns; CL = 50pF; RL = 500
)
Limits
TA = –40
°
C to +85
°
C
VCC = 3.0V to 3.6V
Min
VCC = 2.7V
Max
Symbol
Parameter
Waveform
Max
Unit
tPLH
tPHL
tPZH
tPZL
tPHZ
tPLZ
tOSHL
tOSLH
3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH–to–LOW (tOSHL) or LOW–to–HIGH (tOSLH); parameter
guaranteed by design.
Propagation Delay
Input to Output
1
1.5
1.5
6.5
6.5
7.5
7.5
ns
Output Enable Time to
High and Low Level
2
1.5
1.5
8.0
8.0
9.0
9.0
ns
Output Disable Time From
High and Low Level
2
1.5
1.5
7.0
7.0
8.0
8.0
ns
Output–to–Output Skew
(Note 3.)
1.0
1.0
ns
DYNAMIC SWITCHING CHARACTERISTICS
TA = +25
°
C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOLP
Dynamic LOW Peak Voltage (Note 4.)
VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V
0.8
V
VOLV
4. Number of outputs defined as “n”. Measured with “n–1” outputs switching from HIGH–to–LOW or LOW–to–HIGH. The remaining output is
measured in the LOW state.
Dynamic LOW Valley Voltage (Note 4.)
VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V
0.8
V
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 3.3V, VI = 0V or VCC
7
pF
COUT
Output Capacitance
VCC = 3.3V, VI = 0V or VCC
8
pF
CPD
Power Dissipation Capacitance
10MHz, VCC = 3.3V, VI = 0V or VCC
25
pF
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