參數(shù)資料
型號: MC74HC390
廠商: ON SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: Dual 4-Stage Binary Ripple Counter with ±2 and ±5 Sections
中文描述: 雙4位的二進制紋波計數(shù)器± 2和± 5節(jié)
文件頁數(shù): 2/8頁
文件大小: 216K
代理商: MC74HC390
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
2
Power Dissipation in Still Air,Plastic or Ceramic DIP
750
500
mW
Tstg
TL
Storage Temperature
SOIC Package
– 65 to + 150
C
Lead Temperature, 1 mm from Case for 10 Seconds
C
* Maximum Ratings are those values beyond which damage to the device may occur.
Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
Ceramic DIP: – 10 mW/ C from 100 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
(Ceramic DIP)
300
(Figure 1)
0
500
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
VCC = 4.5 V
Guaranteed Limit
– 55 to
3.15
4.2
4.2
VCC
Voltage
20
μ
A
4.5
6.0
3.15
3.15
4.2
6.0
1.2
1.2
1.2
VOH
Minimum High–Level Output
Vin = VIH or VIL
2.0
1.9
1.9
1.9
5.2 mA
5.48
5.34
5.20
V
VOL
Maximum Low–Level Output
Vin = VIH or VIL
|Iout|
6.0
2.0
6.0
0.1
0.1
0.1
0.1
0.1
0.1
4.0 mA
5.2 mA
0.26
0.26
0.33
0.33
0.40
0.40
V
Iin
Maximum Input Leakage Current
Vin = VCC or GND
|Iout|
4.5
6.0
6.0
0.1
1.0
1.0
A
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout)
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
VCC.
相關(guān)PDF資料
PDF描述
MC74HC390AD Dual 4-Stage Binary Ripple Counter with ±2 and ±5 Sections
MC74HC390ADR2 Dual 4-Stage Binary Ripple Counter with ±2 and ±5 Sections
MC74HC390ADT Dual 4-Stage Binary Ripple Counter with ±2 and ±5 Sections
MC74HC390AN Dual 4-Stage Binary Ripple Counter with ±2 and ±5 Sections
MC74HC390D Dual 4-Stage Binary Ripple Counter with ±2 and ±5 Sections
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